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Width: 2.90 mm
Height: 1.08 mm
Length: 2.7 mm
Fall Time: 77 ns
Rise Time: 8 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: N-Channel
Qg - Gate Charge: 2.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 14 ns
Id - Continuous Drain Current: 53 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.2 S
Rds On - Drain-Source Resistance: 7.2 Ohms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 5 V
