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Fall Time: 3.2 ns, 14 ns
Rise Time: 8 ns, 6 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 5.2 nC, 6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 3.57 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6 ns, 9 ns
Typical Turn-Off Delay Time: 16 ns, 28 ns
Id - Continuous Drain Current: 11 A, 7.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 30 S, 9 S
Rds On - Drain-Source Resistance: 18 mOhms, 45 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V, 2 V
