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Width: 2.9 mm
Height: 1.00 mm
Length: 2.4 mm
Fall Time: 55 ns
Rise Time: 44 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 1.1 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 700 mW
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Typical Turn-On Delay Time: 17 ns
Typical Turn-Off Delay Time: 45 ns
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.725 S
Rds On - Drain-Source Resistance: 1.5 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
