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WeEn Semiconductors WG30N65HFW1Q IGBT, 60 A, 1.55 V, 312 W, 650 V, TO-247, 3 Pins | EMIN.CO.ID

IGBTs
WeEn Semiconductors WG30N65HFW1Q IGBT, 60 A, 1.55 V, 312 W, 650 V, TO-247, 3 Pins

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WeEn Semiconductors WG30N65HFW1Q IGBT, 60 A, 1.55 V, 312 W, 650 V, TO-247, 3 Pins

ManufacturerWeEn Semiconductors(View more products from this manufacturer)

ModelWG30N65HFW1Q

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No. of Pins: 3

Power Dissipation: 312 W

Transistor Mounting: Through Hole

Transistor Case Style: TO-247

Operating Temperature Max: 175 °C

Continuous Collector Current: 60 A

Collector Emitter Voltage Max: 650 V

Collector Emitter Saturation Voltage: 1.55 V

Datasheet

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