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Fall Time: 23 ns
Rise Time: 22 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 24.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 18 ns
Typical Turn-Off Delay Time: 23 ns
Id - Continuous Drain Current: 70.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 62 S
Rds On - Drain-Source Resistance: 8.8 mOhms
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: 4 V
