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Width: 5.15 mm
Length: 6.15 mm
Fall Time: 48 ns
Rise Time: 54 ns
Technology: Si
Qg - Gate Charge: 20 nC
Pd - Power Dissipation: 7.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 11 ns
Typical Turn-Off Delay Time: 18 ns
Id - Continuous Drain Current: 8.9 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 334 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 4 V
