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Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 3.1W
Operating temperature: -55 to 150C
Drain to Source voltage: 60V
Continuous drain current: 5.3A
Current - Drain (Id) (25°C): 5.3A
Field-effect transistor type: 2N-Channel(Dual)
Gate Charge - (when applying Vgs): 20nC@10V
Drain to Source on-state resistance: 58mOhm
On Voltage - (Vgs when Id is applied): 3V@250uA
On Resistance - (Rds when Id,Vgs is applied): 58mOhm@4.3A|10V
Input Capacitance - (Ciss when Vds is applied): 665pF@15V
