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Fall Time: 40 ns, 30 ns
Rise Time: 80 ns, 60 ns
Technology: Si
Unit Weight: 337.318 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 49 nC, 200 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 38 W, 83 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 20 ns, 45 ns
Typical Turn-Off Delay Time: 20 ns, 65 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 130 S, 130 S
Rds On - Drain-Source Resistance: 3 mOhms, 900 uOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
