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Width: 3.3 mm
Height: 1.04 mm
Length: 3.3 mm
Fall Time: 8 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N Channel
Qg - Gate Charge: 21 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 52 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 35 ns
Id - Continuous Drain Current: 35 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 50 C
Forward Transconductance - Min: 97 S
Rds On - Drain-Source Resistance: 6.6 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
