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Width: 6.22 mm
Height: 1.9 mm
Length: 7.9 mm
Fall Time: 4 ns, 4 ns
Rise Time: 4.6 ns, 4.6 ns
Technology: Si
Unit Weight: 50 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 75 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 75 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 15.5 ns, 15.5 ns
Typical Turn-Off Delay Time: 30 ns, 30 ns
Id - Continuous Drain Current: 100 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 80 S, 80 S
Rds On - Drain-Source Resistance: 2.9 mOhms, 2.9 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
