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Width: 5.13 mm
Height: 1.04 mm
Length: 6.15 mm
Fall Time: 8 ns, 8 ns
Rise Time: 13 ns, 13 ns
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 40 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 27 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 11 ns
Typical Turn-Off Delay Time: 36 ns, 36 ns
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 S, 10 S
Rds On - Drain-Source Resistance: 67 mOhms, 67 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
