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Fall Time: 19 ns
Rise Time: 17 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 5.9 nC, 7.9 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 3.3 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7 ns
Typical Turn-Off Delay Time: 10 ns
Id - Continuous Drain Current: 7.3 A, 5.3 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 21 mOhms, 56 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
