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Fall Time: 7 ns, 12 ns
Rise Time: 40 ns, 53 ns
Technology: Si
Unit Weight: 143.050 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 14.4 nC, 41 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 52 W, 78 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V, - 12 V, + 16 V
Typical Turn-On Delay Time: 17 ns, 25 ns
Typical Turn-Off Delay Time: 23 ns, 30 ns
Id - Continuous Drain Current: 83 A, 143 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4.5 mOhms, 1.9 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V, 1 V
