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Fall Time: 7 ns, 7 ns
Rise Time: 55 ns, 82 ns
Technology: Si
Unit Weight: 143.050 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 19 nC, 35 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 16.7 W, 31 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 13 ns, 22 ns
Typical Turn-Off Delay Time: 16 ns, 20 ns
Id - Continuous Drain Current: 30 A, 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 37 S, 60 S
Rds On - Drain-Source Resistance: 9.5 mOhms, 5.1 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
