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Fall Time: 25 ns, 20 ns
Rise Time: 55 ns, 42 ns
Technology: Si
Unit Weight: 143.050 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 13.1 nC, 13.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 33 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 20 ns
Typical Turn-Off Delay Time: 24 ns
Id - Continuous Drain Current: 24.7 A, 24.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 24.5 mOhms, 24.7 mOhms
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
