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Width: 3.3 mm
Height: 1.04 mm
Length: 3.3 mm
Fall Time: 10 ns
Rise Time: 11 ns
Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 6.5 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 19.8 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 7 ns
Typical Turn-Off Delay Time: 11 ns
Id - Continuous Drain Current: 2.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 S
Rds On - Drain-Source Resistance: 1.2 Ohms
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
