Vishay General Semiconductor SI1869DH-T1-E3 MOSFETs -20V Vds 8V Vgs SOT-363
ModelSI1869DH-T1-E3
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Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1 W
Id - Continuous Drain Current: 1.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 165 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
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