Vishay General Semiconductor SI1012CR-T1-GE3 MOSFETs 20V Vds 8V Vgs SC75A

Width: 0.76 mm

Height: 0.8 mm

Length: 1.575 mm

Fall Time: 11 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 240 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 26 ns

Id - Continuous Drain Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7.5 S

Rds On - Drain-Source Resistance: 396 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV