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Fall Time: 23 ns
Rise Time: 8 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 55 nC
Transistor Polarity: N-Channel
Pd - Power Dissipation: 132 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 22 ns
Typical Turn-Off Delay Time: 71 ns
Id - Continuous Drain Current: 120 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 1.96 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3 V
