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Technology: Si
Unit Weight: 840 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.5 W
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 300 mV
