Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 360 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.1 W
DC Current Gain hFE Max: 250 at 1 mA, 5 V
Emitter- Base Voltage VEBO: 8 V
Collector- Base Voltage VCBO: 800 V
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 80 at 1 mA, 5 V
Collector- Emitter Voltage VCEO Max: 375 V
Collector-Emitter Saturation Voltage: 500 mV
