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Toshiba TRS3E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 3A TO-220-2L | EMIN.CO.ID

Diodes & Rectifiers
Toshiba TRS3E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 3A TO-220-2L

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Toshiba TRS3E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 3A TO-220-2L

ManufacturerToshiba(View more products from this manufacturer)

ModelTRS3E65H,S1Q

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Technology: SiC

Mounting Style: Through Hole

If - Forward Current: 3 A

Ir - Reverse Current: 2 uA

Vf - Forward Voltage: 1.2 V

Pd - Power Dissipation: 55 W

Ifsm - Forward Surge Current: 170 A

Vrrm - Repetitive Reverse Voltage: 650 V

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