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Toshiba TPN4R712MD,L1Q(M MOS Power Transistors LV (=< 40V) | EMIN.CO.ID

MOSFETs
Toshiba TPN4R712MD,L1Q(M MOS Power Transistors LV (=< 40V)

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Toshiba TPN4R712MD,L1Q(M MOS Power Transistors LV (=< 40V)

ManufacturerToshiba(View more products from this manufacturer)

ModelTPN4R712MD,L1Q(M

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Channel Type: P Channel

Power Dissipation: 42

Transistor Mounting: Surface Mount

Transistor Case Style: TSON

Drain Source Voltage Vds: 20

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 36

Drain Source On State Resistance: 4.7

Gate Source Threshold Voltage Max: 1.2

Datasheet

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