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Toshiba TPH1R306PL,L1Q(M MOS Power Transistors LV ( 41V-100V) | EMIN.CO.ID

MOSFETs
Toshiba TPH1R306PL,L1Q(M MOS Power Transistors LV ( 41V-100V)

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Toshiba TPH1R306PL,L1Q(M MOS Power Transistors LV ( 41V-100V)

ManufacturerToshiba(View more products from this manufacturer)

ModelTPH1R306PL,L1Q(M

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Channel Type: N Channel

Power Dissipation: 170

Transistor Mounting: Surface Mount

Transistor Case Style: SOP

Drain Source Voltage Vds: 60

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 260

Drain Source On State Resistance: 1.34

Gate Source Threshold Voltage Max: 2.5

Datasheet

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