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Vgs(th): 2.3 V
Vgs (Max): 20V
Gate Charge (Qg): 34nC
Power consumption: 1.6|42W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 28A
Input Capacitance (Ciss): 2900pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 5.6mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
