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Vgs(th): 2 V
Vgs (Max): +20|-25V
Gate Charge (Qg): 56nC
Power consumption: 1W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 11A
Input Capacitance (Ciss): 2400pF
Operating temperature range: 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 10mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
