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Width: 4.5 mm
Height: 15 mm
Length: 10 mm
Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 35 W
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 1.9 Ohms
Vds - Drain-Source Breakdown Voltage: 650 V
