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Width: 4.45 mm
Height: 15.1 mm
Length: 10.16 mm
Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 126 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 8.2 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
