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Fall Time: 250 ns
Rise Time: 100 ns
Technology: Si
Unit Weight: 360 mg
Channel Mode: Enhancement
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 156 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 100 W
Vgs - Gate-Source Voltage: - 20 V, + 10 V
Typical Turn-On Delay Time: 127 ns
Typical Turn-Off Delay Time: 970 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 11.2 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 3 V
