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Fall Time: 145 ns
Rise Time: 42 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 285 mW
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 17 ns
Typical Turn-Off Delay Time: 420 ns
Id - Continuous Drain Current: 250 mA
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 1.4 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
