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Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel MOSFET
Qg - Gate Charge: 3.6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 360 ns
Typical Turn-Off Delay Time: 670 ns
Id - Continuous Drain Current: 3.5 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 112 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
