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Technology: Si
Unit Weight: 7 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 7.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 11.5 ns, 11.5 ns
Typical Turn-Off Delay Time: 8.3 ns, 8.3 ns
Id - Continuous Drain Current: 1.6 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 2.5 S, 2.5 S
Rds On - Drain-Source Resistance: 87 mOhms, 87 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 350 mV
