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Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Qg - Gate Charge: 3.2 nC, 6.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.8 W
Vgs - Gate-Source Voltage: - 8 V, + 12 V, - 12 V, + 6 V
Typical Turn-On Delay Time: 21 ns, 26 ns
Typical Turn-Off Delay Time: 17 ns, 54 ns
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 39.1 mOhms, 45 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V, 1 V
