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Width: 1.2 mm
Height: 0.55 mm
Length: 1.6 mm
Technology: Si
Unit Weight: 3 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 7.9 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 700 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 15 ns
Typical Turn-Off Delay Time: 75 ns
Id - Continuous Drain Current: 3.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 5.7 S
Rds On - Drain-Source Resistance: 50 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
