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Width: 2 mm
Height: 0.75 mm
Length: 2 mm
Technology: Si
Unit Weight: 8.500 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, SBD
Qg - Gate Charge: 2.2 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel, SBD
Pd - Power Dissipation: 1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 160 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
