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Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 200 mW
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 70 ns
Typical Turn-Off Delay Time: 125 ns
Id - Continuous Drain Current: 100 mA
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 40 mS
Rds On - Drain-Source Resistance: 3 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
