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Technology: Si
Unit Weight: 7 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 15.5 ns
Typical Turn-Off Delay Time: 8.5 ns
Id - Continuous Drain Current: 1.5 A
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 160 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
