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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 24 ns
Rise Time: 3 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 270 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 700 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 2 ns
Typical Turn-Off Delay Time: 7 ns
Id - Continuous Drain Current: 170 mA
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 3.9 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
