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Width: 0.8 mm
Height: 0.5 mm
Length: 1.2 mm
Technology: Si
Unit Weight: 1.500 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-channel
Qg - Gate Charge: 1.23 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 150 mW
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 75 ns
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 630 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 350 mV
