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Fall Time: 50 ns
Rise Time: 25 ns
Technology: Si
Unit Weight: 6.600 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Qg - Gate Charge: 6 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.6 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 150 ns
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 1 S
Rds On - Drain-Source Resistance: 300 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
