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Vgs (Max): 8V
Power consumption: 150mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 800mA
Input Capacitance (Ciss): 100pF
Operating temperature range: 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 390mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.2|4.5V
