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Technology: Si
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Qg - Gate Charge: 3 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.2 W
Vgs - Gate-Source Voltage: - 20 V, + 10 V
Typical Turn-On Delay Time: 4.3 ns
Typical Turn-Off Delay Time: 31.7 ns
Id - Continuous Drain Current: 400 mA
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 2 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2 V
