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Width: 1.7 mm
Height: 0.7 mm
Length: 2 mm
Technology: Si
Unit Weight: 6.600 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 8.1 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 32 ns
Typical Turn-Off Delay Time: 102 ns
Id - Continuous Drain Current: 4.6 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 46 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
