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Width: 1.7 mm
Height: 0.7 mm
Length: 2 mm
Technology: Si
Unit Weight: 6.600 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 800 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.6 S
Rds On - Drain-Source Resistance: 225 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
