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Fall Time: 2.1 us
Rise Time: 1.3 us
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 76 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.33 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 1 us
Typical Turn-Off Delay Time: 3.8 us
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 1.35 mOhms
