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Fall Time: 494 ns
Rise Time: 159 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 17.3 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.51 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 87 ns
Typical Turn-Off Delay Time: 816 ns
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
