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Technology: SiGe
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 12.5 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
Emitter- Base Voltage VEBO: 600 mV
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 5.3 V
