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Toshiba 2SK3566(Q,M) MOS Power Transistors HV (>= 200V) | EMIN.CO.ID

MOSFETs
Toshiba 2SK3566(Q,M) MOS Power Transistors HV (>= 200V)

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Toshiba 2SK3566(Q,M) MOS Power Transistors HV (>= 200V)

ManufacturerToshiba(View more products from this manufacturer)

Model2SK3566(Q,M)

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Channel Type: N Channel

Power Dissipation: 40

Transistor Mounting: Through Hole

Transistor Case Style: TO-220SIS

Drain Source Voltage Vds: 900

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 2.5

Drain Source On State Resistance: 6.4

Gate Source Threshold Voltage Max: 4

Datasheet

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