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Width: 0.8 mm
Height: 0.5 mm
Length: 1.2 mm
Technology: Si
Unit Weight: 1.500 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 60 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 150 mA
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 150 mV
