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Technology: Si
Unit Weight: 5.500 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 100 W
DC Current Gain hFE Max: 60
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 900 V
Continuous Collector Current: 5 A
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 15
Collector- Emitter Voltage VCEO Max: 800 V
Collector-Emitter Saturation Voltage: 1 V
